Design And Fabrication Of Narrow-band Infrared Emitter

In recent years, with the rapid development of MEMS technology, there has been atrend in developing small volume, low power and low-cost sensing devices. MEMSinfrared emitter came into being, which has become the focus of infrared gas sensortechnology research. Narrow-band infrared emitters based on MEMS technology furtherachieve the narrowband filtering. This paper aims to carry out the narrow-band emitter’stheoretical analysis, experiment research and devices fabrication, to propose a new methodby changing the fabrication parameters of titanium nitride to adjust the emission spectrumfeatures, which makes the narrow-band infrared emitter simpler and less costly. The papermainly includes:(1) Analysis on the optical performance of a Metal-Dielectric-Metal (MDM)narrow-band infrared emitter. The relation between the emission spectrum properties ofMDM narrow-band emitter, and the material and geometry parameters of MDM structureis particular analyzed by transfer matrix method.(2) Simulation of the thermal and mechanical properties of the narrow-band infraredemitter by the finite element method. The relation between the thickness of support layerand micro-bridge deformation is analyzed. The temperature distribution, thermal stressdistribution, thermal expansion and deformation of narrow-band infrared emitter issimulated, when narrow-band infrared emitter works in steady state.(3) Fabrication of narrow-band infrared emitter device by using MEMS technology. Alarge number of experiments is carried out to study the two key technologies, includingporous silicon sacrificial layers fabrication and silicon nitride etching technology.(4) Experimental measurement of the preliminary electrical properties of thenarrow-band infrared emitter. A modified device structure is proposed, and a newfabrication process is designed.