Research On The Noise Sensitive Characterization Technique Of Radiation Damage In SiO₂ Dielectric Material

With the development of the microelectronics technology and aerospace technology, the performance of electronic devices increases greatly, but radiation rays in space will be a serious threat to the reliability of device. The evaluation methods available have some disadvantages. Therefore, in order to ensure the reliability of electronic devices operated in the radiation environment, a rapid, sensitive and simple method is urgently needed to evaluate the radiation tolerance of materials, processes and devices.The degradation of device performance parameters originates from the accumulation of defects in material. In this paper, the radiation damage mechanisms of SiO₂ dielectric widely used in semiconductor devices and integrated circuits were investigated, a unified physical model of radiation damage in SiO₂ dielectric material was established through the analysis of the microscopic mechanism and the physical process during irradiation, that is the buildup of oxide trapped charge and interface trap charge. Under the guidance of the radiation effects research methods which combines materials with devices, the radiation damage properties of SiO₂ dielectric material in different parts of semiconductor devices were studied and test structures for radiation damage were designed. The irradiation experiment was designed to verify the correctness of test sample and the physical model of radiation damage. According to the comparison between electrics parameters and noise, 1/f noise amplitude B and frequency factorγwere chosen as the noise sensitive characterization parameters. By taking into account of the impact of inversion carrier density on the scattering coefficient, 1/f noise amplitude B as a function of gate bias and drain bias were discussed, the relationship between 1/f noise model and 1/f2 noise model was also concerned. The relationship between the gate bias and noise frequency factorγwas analyzed through the experiment results from the enclosed gate MOSFETs, and the energy distribution factorξand spatial distribution factorsηof the defects were extracted, the results show thatξtends to decrease andηtends to increase with the accumulation of radiation dose. Finally, on the basis of amended 1/f noise model, the noise sensitive characterization technique for radiation damage in SiO₂ dielectric material was proposed, including parameter extraction methods, failure criteria and test procedures.Through the establishment of the model for radiation damage in SiO₂ dielectric material, the design of radiation damage-parameter test samples as well as the research on noise characterization model and method, a noise sensitive characterization technique for radiation damage in SiO₂ dielectric material was proposed, it produces a new method for the radiation tolerance evaluation of the electronic material, technology and devices.