Preparation And Characterization Of Er-Doped Al₂O₃ Films And Er-Doped Nc-SiO₂ Films

With the development of optical communication and integrated optoelectronics, Er Doped Waveguide Amplifier (EDWA) has become the hotspot in the field of optical fiber communication and optoelectronics. We prepared Er-doped Al2O3 Films and Er-doped nc-SiO2 Films, and studied their characterization.Er-doped Al2O3 Films were prepared by Ion Beam Enhanced Deposition (IBED) and Ion Implantation. After different annealing temperature, we examined the composition, surface morphology, structure and chemical value. Er3+ ions were activated gradually and photoluminescence intensity increased with the annealing temperature. Annealed at 700℃, refractive index and surface roughness reached the least, which affected optical transmission spectra, optical absorption loss, and photoluminescence intensity. This thesis discussed the PL mechanism.We also prepared Er-doped nc-SiO2 Films by Ion Implantation. After different annealing temperature, the microstructure and photoluminescence were investigated. We discussed the PL mechanism in-depth, and made conclusions that Er ions lied in amorphous Si and coupled with nc-Si through a-Si, which affected the energy transfer from nc-Si to Er. We ameliorated Polman's model.Finally, the paper developed the co-sputtering technology to prepare Er-doped films.