| With the development of optical communication and integrated optoelectronics, Er Doped Waveguide Amplifier (EDWA) has become the hotspot in the field of optical fiber communication and optoelectronics. We prepared Er-doped Al2O3 Films and Er-doped nc-SiO2 Films, and studied their characterization.Er-doped Al2O3 Films were prepared by Ion Beam Enhanced Deposition (IBED) and Ion Implantation. After different annealing temperature, we examined the composition, surface morphology, structure and chemical value. Er3+ ions were activated gradually and photoluminescence intensity increased with the annealing temperature. Annealed at 700℃, refractive index and surface roughness reached the least, which affected optical transmission spectra, optical absorption loss, and photoluminescence intensity. This thesis discussed the PL mechanism.We also prepared Er-doped nc-SiO2 Films by Ion Implantation. After different annealing temperature, the microstructure and photoluminescence were investigated. We discussed the PL mechanism in-depth, and made conclusions that Er ions lied in amorphous Si and coupled with nc-Si through a-Si, which affected the energy transfer from nc-Si to Er. We ameliorated Polman's model.Finally, the paper developed the co-sputtering technology to prepare Er-doped films. |
