Research On Noise Parameter Using For Characteristic Radiation Hardness Of GaAs-based Semiconductor Material

As a typical sort of semiconductor material of second generation, Gallium arsenic enjoys many significant applications in various radioactive environments such as the bump experiment of high energy particles, aviation and aeronautic technology, monitor to the radioactive flotsam, and so on. As a result, it does make sense to undertake a detailed research into the irradiation effect of the material in order to improve its quality. However, a technical method, which is simply and fast in operating and completely non-destructive in estimating the anti-radiation characteristics of the material ,is not yet available in domestic research practices. The technical property of low-frequency noise measurement, which has proved to be a powerful tool in characterize the damage of silicon component due to irradiation, could fully meet the requirements in characterizing the irradiation damage of the Gallium arsenic material.In this thesis, a research into the radiation effect of Gallium arsenic in low dose gamma irradiation by traditional electrical parameters and low-frequency noise parameters measurement technology is performed. After a comparison between traditional electrical parameters and low-frequency noise parameters, we can find out that the degradation of low-frequency noise parameters is one level's more than the former ones. It could imply that low-frequency noise parameters are more sensitive than the electrical parameters on the characterization of Gallium arsenic anti-radiation characteristics.Here are the main contributions and conclusions of this paper:(1) We have undertaken a detailed research into the micro-mechanism of the damage of Gallium arsenic due to irradiation and come up with the conclusion that the main effect of low dose gamma irradiation on Gallium arsenic is changing the electrical state of the defects.(2) The courses of the responses to irradiation in both traditional measurement and low-frequency noise measurement are analyzed. The interpretations are also worked out in the meantime.(3) Both the electrical model and noise characterization model of the irradiation damage of Gallium arsenic are proposed. The corresponding parameters for characterization are measured and the characterizing mechanisms are analyzed.(4) We have both proposed and performed a PHEMT experiment to measure the electrical parameters and low-frequency noise parameters of the material before and after the irradiation, respectively. The results show that: the response of low-frequency noise parameters is more sensitive in comparison with that of the electrical parameters.(5) We justified the proposed models by means of comparing the turn-outs of the theoretical models and the experiments.