Electrical Characterization Measurement Of Semi-insulating SiC Single Crystal

In this paper, we reveal some characters of the semi-insulating silicon carbide (SI-SiC), and give a brief introduction of the manufacture processing of SiC.The test and measuring method of the electrical properties, the Hall method and the COREMA method, are emphatically studied.The conventional Hall method is to make high tempareture testing by the structure of van-der-Pauw method, and obtain the relationship between these electrical properties and the tempareture.The contactless resistivity mapping (COREMA) is widely used in the testing of semi-insulating semiconductor, especially the testing of high resistivity materials.It has an advantage of easy and nondestructive operating, and avoids the preparation of sample.The diameter of the wafer that being tested can reach 200mm.The COREMA has high resolution, and it is especially applicable to the fabrication and the exploration of processing.We make an introduction of this theory and its use. with this method we make a study of the resistivity,carrier mobility,and the ralationship between resistivity and tempareture.By comparsion,we know that this method has an advantage of low cost,high speed, nondestructive, high repeatability and lateral resolution over the conventional method.