Simulate Damnified IC By HPM With The Computer

With the development of VLSI technology, the density of integration is rising in exponential form. There are hundreds of millions components on an average chip now. As the density of integration rising, some disadvantage effect is explicit gradually. Such as the ability of the IC for resisting EMP is only millesimal of the transistor and even lower than the electron tube's. The IC becomes very frail when radiated by HPM, even a low energy pulse could make IC produce the error code and lead the system palsy. The main idea of the paper is to build the IC model and studies its damage threshold under high power microwave environment.In this paper, we first introduce the effect of the HPM, analyze the main failure mechanism and the damage pattern of the semiconductor device. Then, we deduce that the permanent inactivation of the CMOS IC includes two cases from the experimental findings and the corresponding data: metal wire burnout and the grid oxide layer breakdown. By researching the composition and the inside distribution parameters of the CMOS IC, we build the its model with the PSPICE software.The grid electrode voltage and the metal wire's branch current are calculated too.We use the electromagnetic field Finite Element Method (the tool software is ANSYS) to calculate the field intensity distribution, the temperature distribution of the metal wire and the the field intensity distribution of the grid oxide layer. And then, we determine its working status, and we also could get the IC damage threshold. Finally, the damage experiment under the HPM environment are carried basing on the model.We get some logical conclusions by analyzing the IC damage threshold from three aspects: different IC circuit size, different pulse width and different polarization direction. Therefore, it is meaningful to improve the radiation effect of the HPM pulse radiation source and the IC's anti-interference ability by studying the damage effect to the electron device of the HPM pulse radiation source.