Numerical Modeling Of Electric Characteristics Of GaN-based Schottky Device

Gallium Nitride (GaN) based wide direct bandgap semiconductors have become the most important materials for high temperature, high power, high frequency electronic devices as well as for light emitting diodes, laser diodes, ultraviolet photodetectors. GaN-based light emitting devices have a great prospect in saving energy. GaN-based semiconductor photodetectors will take the place of vacuum tube devices in ultraviolet detection area. The UV detection also has a great application background.To improve the property of GaN-based device, it is very important to establish a numerical simulation platform to analyze the electric property and optimize the structure of the device. The detail is as following:1. simulating the electric property of the device with interface layer of various thickness;2. simulating the electric property of the device and analyzing the effect of bulk layer by changing the thickness of bulk layer for fixed interface layer;3. simulating the electric property of the Schottky avalanche device without interface layer and validating the effect of bulk layer by changing the thickness;4. simulating the electric property of the Schottky avalanche device with interface layer, and validating the effect of interface layer further by comparing the conventional Schottky avalanche device without interface layer and the Schottky avalanche device with interface layer.