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Design And Implementation Of Microwave Broadband And Low Noise Amplifier

Posted on:2008-08-12Degree:MasterType:Thesis
Country:ChinaCandidate:J M DongFull Text:PDF
GTID:2178360245492951Subject:Electromagnetic field and microwave technology
Abstract/Summary:PDF Full Text Request
This paper deals with the process of microwave broadband and low noise amplifier design and research.First, the background, history of microwave transistor amplifier and design technology of microwave amplifier are introduced, along with theory and related knowledge of the microwave broadband LNA(including from the choice of the circuit topology of broadband LNA to the simulation of the circuit, from the implementation of the circuit to the test of the broadband LNA) .In this design, a broadband low noise is designed and manufactured. Microstrip circuit and balanced techniques , which is consisted of lange coupler, are used. A new type of transistor named PHEMT EC2612 is adopted, a type of software—Ansoft Serenade which is for business, are used to computer-aided design the circuit. The amplifier is manufactured in Al2O3 substrate, cover the frequency of more than 1 octave band range from 8GHz to 18GHz(RBW is 77%) ,achieves following performance which is measured : gain>30 dB, gain plainness<3 dB, noise coefficient<2.0 dB, input and output standing wave ratio<2.2, 1dB compress point output power>10 dBm.
Keywords/Search Tags:Pseudomorphic High Electron Mobility Transistor (PHEMT) EC2612, Balanced Structure, Wide-band Low Noise Amplifier (LNA), Lange Coupler, Computer Aided Design (CAD)
PDF Full Text Request
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