The Analysis Of The Operational Mechanism Of Organic Static Inductive Transistor

Organic static inductive transistor (OSIT) is a new type of organic film transistor. It has a vertical structure like static inductive transistor (SIT). And its active layer is made of organic semiconductor material, namely copper phthalocyanine (CuPc). The sample of CuPc-OSIT was fabricated successfully in 1999.This dissertation was focus on analyzing the operational mechanism of OSIT. Firstly, the physical model of CuPc-OSIT was founded according to its sample. And then selecting suitable structure parameter and boundary condition, applying Marc software and finite element method to simulate and analyzes, the potential distribution in the conductive channel of OSIT was finally obtained. Depending on the potential distribution in the conductive channel, the relation of channel barrier and bias voltage and structure size was discussed. It was proved that the channel potential controlling mechanism of inorganic SIT was the same with OSIT. On the other hand, in order to analyze the current-voltage (I-V) characteristics of OSIT and understand the essential of carrier injection and transport in organic electronic device, the experiment I-V data were fitted depending on classical theory models. Through comparing the fitting curve with actual curve, carrier injection and transport modes in OSIT under different bias voltage were further discussed. And it confirmed that related theory of inorganic SIT was suitable to OSIT.In this paper, the operational mechanism of OSIT has been analyzed and expounded systematically and theoretically. It includes potential distribution, carrier injection and transport mechanism, the relationship between device operational properties and structure parameters, and so on. It will form the basis of founding integrated OSIT device theory, and theoretically prepare for optimizing device structure and device practicality of OSIT.