Design And Fabrication Of 1.31μm GaInNAs Laser

The optical gain, output wavelength and temperature sensitivity ofGaInNAs stain quantum-well wafers were described in this thesis. Whatcaused these characteristics were analyzed in theory. The N-radicalsincorporated into the active layer would lead to unusual bowing parametersand the causation of this situation was explained. Ridge waveguideGaInNAs strain single-quantum-well lasers were designed and fabricatedwith pulsed anodic oxidation. Laser output power reached 14mW in cwmode at room temperature from the lasers with a wavelength of 1.31μm.The threshold-current was 18mA and it's density was 360A/cm~2. Thecharacteristic temperature of lasers was 135.1K and the quantum efficiencyreached to 76%. All these data had shown the excellent characteristics of theGaInNAs quantum-well stain-compensated material.