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Study And Analysis On 980mm High Power Vertical Cavity Surface Emitting Lasers

Posted on:2005-04-08Degree:MasterType:Thesis
Country:ChinaCandidate:L M ZhaoFull Text:PDF
GTID:2168360125450711Subject:Measuring and Testing Technology and Instruments
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Vertical-cavity surface-emitting lasers have the potential to become the new solid laser light source and the most important communication device in information age for their excellent performance.It has many advantages for example low divergence angle,high fiber-coupling efficiency,low noise effect,high convertion efficiency,low threshold current. Moreover it can be integrated in two-dimensional array configuration and tested at the wafer level. VCSELs can be applied in light communication,laser printing,gas measuring,high density memory and displaying .For holding these advantages, at 1980s some international universities and institutes commenced research about VCSELs, mainly in 850nm wavelength.But its development was very slow because the confinement in material growth and device technics. The threshold current and output power of the devices have been raised since the selective oxidation technology invented in the 1990s.In international market the 850nm wavelenth's VCSELs and low power VCSELs were commercial. The 850nm wavelenth's VCSELs taked small output light window less than 25um and its output power were 10mW. With demanding for high output power in iatrology ,material processing and laser pumping ,people started to research high power VCSELs. To improving output power ,people want to amplify the laser's output light window and the active area. In the 2001 year, M.Miller of the German ULM university has researched the high output power VCSELs by taked output light from bottom of the substrate, the single chip's continous output power attained to 980 mw and pulse power was 10 W.About the high output power VCSELs, lasing wavelenth being 980nm is very important .it is the pumping source of the EDFA and play a important role in the light communication.So far in the international world the fiber laser's power may to some thousand W,it has been used in dustrial process,incising and so on. With compare to 808nm ,980nm is not visible to eyes.it has been used in the object denoting and detecting,so it is a very important martial light source. It is a pleasant thing to research 980 nm high output power VCSELs . In this dissertation,we give some results on the design and fabrication of 980nm high power VCSELs. At the same time we have analyzed the devices. The main work is as follows:The calculations have been made for the active region of the VCSELs.After the calculations,we got the important structure parameters of strained quantum well such as incorporation,well width and the number of the wells.And Distribute Bragg Reflectors(DBR) has been designed too.In order to perform the epitaxial growth,we designed the wafer structure.We have studied the critical technology for fabrication of VCSELs.After the study on the wet etching technology,we got the good formula for the etching liquid and the good etching temperature,the etching depth and the surface quality after etching can be easily controlled.We studied the wet and selective oxidation,theoretic and experimental investigation has been made on how AlAs be oxided in high temperature water vaper,good conditions for oxidation has been gained.After the study on the alloy technology,we got the good alloy conditions.We have analyed the light beam quality,far field pattern,coupling efficiency of the devices. With the work temperature varying, the device's output-power,lasing wavelenth,threshold current and power efficiency are changing. We obtained its changing curves and analyed it.   By using wet etching and selective oxidation process,we fabricated 980nm high power VCSELs.The room temperature CW and pulse operation has been achieved. 1.4W output optical power for CW operation and 1.7W for pulse have been gained....
Keywords/Search Tags:VCSEL, Strained quantum well, Calculation, Wet etching Selective oxidation, light beam quality, far field pattern, Coupling efficiency
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