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Study On High Power 980nm Vertical Cavity Surface Emitting Lasers

Posted on:2005-01-16Degree:MasterType:Thesis
Country:ChinaCandidate:Q WangFull Text:PDF
GTID:2168360122971929Subject:Optics
Abstract/Summary:PDF Full Text Request
Vertical-cavity surface-emitting lasers have the potential to become the new light source in information age for their excellent performance. In this dissertation, we give some results on the design and fabrication of 980nm VCSELs, the main work is as follows:The calculations have been made for the active region of the VCSELs. After the calculations, we got the important structure parameters of strained quantum well such as incorporation, well width and the number of the wells. And Distribute Bragg Reflectors(DBR) has been designed too. In order to perform the epitaxial growth, we designed the wafer structure.We have studied the critical technology for fabrication of VCSELs. After the study on the wet etching technology, we got the good formula for the etching liquid and the good etching temperature, the etching depth and the surface quality after etching can be easily controlled. We studied the wet and selective oxidation, theoretic and experimental investigation has been made on how AlAs or AlxGa1-xAs be oxided in high temperature water vaper, good conditions for oxidation has been gained. After the study on the alloy technology, we got the good alloy conditions.By using wet etching and selective oxidation process, we fabricated 980nm high power VCSELs . The room temperature CW and pulse operation has been achieved. 1.4W output optical power for CW operation and 1.7W for pulse have been gained.
Keywords/Search Tags:VCSEL, Strained quantum well, Calculation, Wet etching, Selective oxidation
PDF Full Text Request
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