Research On Pulsed Power Switch RSD Based On Buffer Layers

In the area of modern pulsed power technology, the development of the high average-power and high repetition-rate pulse power technology speeds up day by day, this put a higher demand on switching in the pulse power system. The pulsed power switching RSD (Reversely Switched Dynistor), which has characteristics of high forward-blocked voltage, great peak current, high di/dt, fast switched time, long lifetime and high repetitive rate and so on. So, there is extensive application prospectiveness for such device used in pulsed power system.In the structure, the only differentness between RSD and the ordinary thyristor is that the anode of RSD which is the structure of P and the N base area alternates with the arrangement. Pulsed power switching RSD is triggered by a thin plasma level which is in N base area approaches the P base area side. This controllable plasma level is established using the method of short-time reverse of the external voltage polarity. Turn-on condition of RSD is the pre-charge amount must be bigger than the critical pre-charge amount Q Rcr. Using the buffer layer structure, we can achieve the same breakdown voltage by the thinner thickness of silicon chip, thus enhances the component efficiency, passing -condition and the dynamic loss also reduces along with it. This structure must unify with the transparent anode structure. The transparent anode is in fact a anode which is comparatively thin and lower doping density, from where the electron may penetrate. unifying the buffer layer and transparent anode structure, may improve the turn-on and turn-off characteristics of RSD. In the process, we may use the method of rubbing out the angles or minority carrier lifetime control technology to enhance the component characteristics. The methods of reducing the carrier lifetime mainly have mixes the gold and the platinum, the electronic irradiation, gamma irradiation, and light ion irradiation and so on. The light ion irradiation can be used in local-lifetime control in power semiconductor devices.The measuring of high pulse current usually use shunt in the past, but shunt only could measure high pulse current below 50KA. The Rogowski coil has the characteristics of high precision, good frequency-response, and there is no direct relationship between the measured circuit and the mesaring circuit. To develop switching used in repetitive rate pulsed power technology the need to develop, this article uses the Rogowski coil to measure high pulse crrent. And we rectified the circuit which is used in Rogowski coil to mesure high pulse current.