Research On The Total Dose Radiation Effect For Modified SIMOX SOI Materials With Pseudo-MOS Method

Silicon-on-insulator (SOI) technologies have been developed on radiation-hardened applications for many years for its unique advantages compared to bulk-silicon in some radiation environments. However, the buried oxide (BOX) in SOI materials limits the total dose radiation performance of SOI devices. Based on this, the effect of the ion implantation technique on the total dose irradiation performance of SIMOX SOI material was investigated and pseudo-MOS method, which would be used to characterize SIMOX SOI in total dose irradiation performance, were primarily studied in this dissertation.SIMOX SOI materials were modified with silicon implantation technique. The effect of the technique on the structure and properties of the materials were studied with Spreading Resistance Profiling (SRP), Atomic Force Microscope (AFM) and X-ray Photoelectron Spectroscopy (XPS). The results showed that the implanted silicon ions have no influence on the top Si but created Si nanocrystals (clusters) in the BOX. TRIM was used to study the silicon implantation parameters of some common SIMOX SOI materials for future work.Total dose radiation effect was studied for the I_D-V_G characteristics of pseudo-MOSFET fabricated on the SOI materials made above with 10 keV X-ray, and the influence of fabrication techniques for the SOI materials on their total dose irradiation performance was analysed. The results showed that the Si implantation techniques could improve the total dose radiation tolerance of the materials. Total dose radiation effect of SIMOX SOI materials was mainly introduced by radiation-induced charge which could be significately reduced through a proper process. However, the implantation of silicon for SIMOX SOI materials increased the density of initial fixed oxide charge in the BOX, which would bring some negative effect on performance of SOI devices. In addition, the pseudo-MOSFET radiation results showed that this method could be efficiently used to study the total dose radiation effect for SOI materials.