Research On The Total Dose Radiation Effect Of SIMOX SOI Modified With Ions Implantation

The buried oxide (BOX) in SOI materials limits the total dose irradiation performance of SOI devices. Based on this, the effect of the ion implantation technique on the total dose irradiation performance of SIMOX SOI material were investigated and Pseudo-MOS method, which would be used to characterize SIMOX SOI in total dose irradiation performance, were primarily studied in this dissertation.SIMON and SIMOX SOI materials modified with nitrogen ions implantation were fabricated with different techniques in this dissertation. The effect of the different techniques on the structure and properties of the material were studied with cross-section transmission electron microscope (XTEM), secondary ions mass spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS) and electron paramagnetic resonance (EPR). The results showed as the followings. For the SIMON samples, the implanted nitrogen ions would gather at the interface of Si/SiO₂ during the post annealing, and bubbles would be formed when the dose of implanted nitrogen ions was enough high, and the structure of the SIMON SOI sample fabricated with two-step annealing was better than that fabricated with one-step annealing. For SIMOX samples modified with nitrogen implantation, nitrogen atoms mainly gathered at the interface of Si/SiO₂ in BOX, and less nitrogen ions distributed in the BOX. The best nitrided result was arrived at when the peak of nitrogen implanted to about 50 nm away from the interface of Top Si/BOX in the BOX layer. Comparing to the two techniques above, the structure of SIMOX modified with nitrogen implantation was superior to that of SIMON SOI sample.Total dose radiation effect was studied for the capacitors of MOS/SOI and PD MOSFET/SOI fabricated on the SOI materials made above with ⁶⁰Co γ-ray and/or 10 keV X-ray, and the effect of fabrication techniques for the SOI materials on their total dose...