8 Inch Copper Chemical Mechanical Polish Process Vs Wafer Corrosion Defect Reduction Method

With the development of semiconductor technology, the line width of interconnect in IC becomes narrower and narrower, Cu-CMP has became the critical part of technology for deep sub micron process.The formation mechanism of Cu-line corrosion defect was studied. With the head clean load and unload pedestal rinse system of AMAT Mirra MESA intergrated CMP tool, design below three experiment by the high pressured deionized water, the wafer is dual Damascus process pattern wafer which just post copper CMP.(1) Add the inter platen clean between the tool monitor, which can keep the polish head status and improve the tool's wafer per hour.(2) Add a step to clean the post CMP wafer surface by the controllable DIW, to reduce the corrosion before wafer be transfer into brush module.(3) Add the new type tension membrane to protect the particle out of belt, and a special chemical or DIW nozzle to improve the wafer edge clean.And by means of analyses of experiment a optimized cleaning method on polish head to reduce the crater defects is provided.