Research On The Electronic Properties Of InAlGaN Multiple Quantum Well Structures

Wide bandgap gallium nitride based semiconductor has greater developing potential and more capacious applying foreground than any other semiconductors because its radiation wavelength covers the whole spectrum from deep ultraviolet to medial infrared. For example, gallium nitride based semiconductor has made progress in shortwave UV laser device and UV detector application. Besides, along with the situation of global energy source more and more austere, gallium nitride based white light LED is regarded as the optimal lamp-house in the next generation for its saving energy, protecting environment, low cost and long life. Thirdly, gallium nitride has been applied in developing blue LED, which can help the next generation blue DVD enter the market.There are more adjustable parameters and especially wider spectrum in direct bandgap quaternion InAlGaN multiple quantum wells material than in gallium nitride or gallium nitride based ternary compounds. By now, most researches on InAlGaN multiple quantum wells rest on the experiment. Comprehensive and thorough theory analyses are put up the first time on the electronic properties of direct bandgap InAlGaN Multiple Quantum Well Structures in this paper. After comparing the result between this paper and relative published papers, validate the correctness of the numerical program. The main work of this paper includes the following aspect:1. Study and confirm the electronic characteristic parameters of zinc blende and wurtzite dualistic III-V nitride (InN, AlN and GaN) material. After summing up, choosing and coordinating the electronic properties parameters both in experiments and theoretic computing program, confirm relative electronic properties parameters of binary materials.2. Study and confirm the electronic characteristic parameter of zinc blende and wurtzite InAlGaN quaternion. According to the known bowing parameters of binary materials and experiment result, use Vigard theorem and confirm the ternary and quaternion III-V nitride material parameters. Hereby found the date-base of InAlGaN electronic characteristic parameter and subprogram muster.3. Study the common electronic characteristic theory of wurtzite structure semiconductor quantum well material, including k-p method of wurtzite, analysis of wave function and corresponding energy band structure in conduction band and valence band, strain effect etc.4. Study the common electronic characteristic theory of zinc blende structure semiconductor quantum well material.5. Program and compute wave functions and corresponding energy band structures of the strain InAlGaN multiple quantum well structures in wurtzite and zinc blende, then compare the conclusion with published paper.