Study On Structure And Optical Properties Of GaAs/AlGa As Quantum Well Material Grown By MBE

Since GaAs/AlGaAs quantum well was proved to be able to absorb long- wavelength infrared, GaAs-based superlattice and quantum well materials have been widely used for infrared detectors’ development as they’re stable for device technology and uniform for large-area focal plane array. Currently GaAs/AlGaAs multiple quantum well infrared detectors are leading to multi-band and THz characteristic area. This paper systematically studied the structure design, material characterization and performance testing of GaAs/AlGaAs superlattice and quantum well material, providing a theoretical basis for the accurate realization of the device design. This paper involves three parts as follows:The first part is theoretical introduction, including the development and current situation of infrared detectors and GaAs/Al GaAs superlattice and quantum well material, as well as the introduction of manufacturing and testing methods.The second part comes for simulation of the band structure in the quantum well. The results indicate that infrared detective peak wavelength decreases as the barrier height increasing. The barrier width’s increase leads to the increase of the wavelength, but the influence is light. The influence of the well width is complicate as the wavelength has the same change with the well width in superlattice structure while the trend is opposite in the multiple quantum wells structure.The last part is the testing results analysis. Surface morphology testing results indicate that the specimens show two-dimensional layered growth morphology with good uniformity and flatness. The real structure parameters are similar to the design values. Room-temperature photoluminescence spectra obtains interband transition emission peak with energy values in accordance with theoretical values.