Structure Design And Characteristic Of GaSb Substrate Multiple Quantum-well Laser Materials

In this thesis, growth of high quality InGaAsSb/AlGaAsSb multiple quantum-well (MQW) materials are extensively studied. A achievement have been obtained in thin film epitaxial growth, structure optimization design. We still analyse structural parameters affecting laser.Design and grow the InGaAsSb/AlGaAsSb MQW epitaxial materials. Also analyze the materials structure and optical characteristics by X-ray double crystal diffraction and PL. We obtain InGaAsSb/AlGaAsSb MQW materials for different emitting wavelength. The structure are 5 10nm thickness In_0.173Ga_0.827As_0.02Sb_0.98/Al_0.2Ga_0.8As_0.02Sb_0.98MQW material, we can see the 5 rank diffraction peak through X-ray double crystal diffraction. From the PL curve in the temperature range from 10K to 300K, we know the PL FWHM is 23meV and the wavelength is 1.92μm at room temperature, PL FWHM is 5meV, with the wavelength is 1.72μm at 10K. All that means we get a very high quality MQW epitaxial material.