Fabrication And Electrical Characterization Of Carbon Nanotube Field-Effect Transistors

Carbon nanotubes are unique one-dimensional nanostructures with remarkable electronic properties. Carbon nanotubes can be either semiconducting or metallic according to their chirality. Semiconducting carbon nanotubes can be used to fabricate field-effect transistors while metallic ones can be used as interconnects. Although lots of research group focus on the improvement of the electrical properties of carbon nanotube field-effect transistors and some focus on integrating carbon nanotube interconnects into silicon CMOS devices, there is barely no research on combining carbon nanotube transistors and carbon nanotube interconnects together. In this paper, we fabricated single-wall carbon nanotube field-effect transistors with multi-wall carbon nanotube interconnects and metal interconnects, characterized their electrical properties, and found out both exhibited similar DC and AC response. As a starting research on fully carbon nanotube integrated circuit, our work demonstrates that it is feasible. Furthermore, a complementary inverter, which is the basic unit of fully carbon integrated circuit, was fabricated.The study of the quantum effect of carbon naotube based devices requires the characterization of differential conductance, but such high-precision measurement is still difficult for internal groups. We designed and assembled a differential conductance measurement system, which was found out to be competent for characterizing the quantum effect of nanodevices after intensive tests. This system will be very helpful in the research on the novel properties of nanodevices.