The Study On Antireflection Films Of 808nm Semiconductor Laser And SLA

The 808nm semiconductor laser is takes the resonant cavity by the AlGa.As crystal (110) natural cleavage plane.In order to obtain the high gain,reduces the threshold value electric current,enhances the quantum efficiency and the laser output,I design antireflection film at the front of this semiconductor laser,and design antireflection film at the front and the back.Whitout coating,the index of reflection of these surfaces is nearly 31.947%.Al₂O₃ film can reduce the index of reflection of the semiconductor laser's front surface to nearly 1.607%,and HfO₂ film can reduce index of reflection of the SLA's surfaces to nearly 0.1%.At the same time,the films protect the component and surface from oxygen and water in the air.