Study On The Coupling Of Laser With Semiconductor Power Amplification

This paper introduces the stracture and fundamental principle of 1.3μrn InGaAsP/InP laser with semiconductor power amplification. In order to obtain the high gain of laser with semiconductor power amplification, reduces the threshold value electric current of laser with semiconductor power amplification, to enhances the quantum efficiency and the laser output, before the design the end surface plates the anti- reflection film, the after end plates the system high reflection membrane. Because the film with low absorption, low scatter and high threshold value, ZrO₂ and MgF₂ are selected as the materials of the film,causes the back cavity back surface index of reflectivity of laser with semiconductor power amplification is 92.5% In theory, and the power efficiency of laser with semiconductor power amplification enhances by between 36.3% to 50%.The properties of coatings have been analysed theoretically and experimentally throughout the deposition process of SiO antireflection films on facets of laser with semiconductor power amplification, and with a wavelength. The transmittanse of cavity faces have been increased appearently.The coupling efficiency of laser with semiconductor power amplification, output power of laser with semiconductor power amplification and operating lifetime have been improved.