Study Of High-current Oxygen Ion Implanter High Temperature Rotation Scanning Target

SOI (Silicon On Insulator) technology exhibit great application potential in many areas such as ULSI and photoelectron devices as a breakthrough conventional bulk silicon technology. It is becoming as a mainstream chip-making technique and the new silicon-based integrated circuits technology in 21 century. The key to the practical use of SIMOX (Separation by Implanted Oxygen) technology, an important SOI preparation technology, depends on how satisfactory performance we can obtain in high-current oxygen ion implanters which are used for implanting oxygen ions into Si to form a buried oxide layer. In ion implanters for SIMOX, requirement enabling high current (～100 mA), high temperature (～600℃), uniform, low contamination and low particle level implantation. The high temperature rotation scanning target is the key parts of the ion implanter.This paper took the high temperature rotation scanning target of the high-current oxygen ion implanter which was designed by the Forty-eighth Institute of CETC as the research object, present modeling and simulation of this target, by utilizing parameter feature modeling and virtual prototype technology.Based on a thorough study of high-temperature scanning rotating target requirements and the design theory (including the research of high vacuum environment auxiliary heating device; batch of all-mechanical scanning and advanced magnetic scanning technology), and with reference to foreign high-temperature target, used CAD/CAM/CAE and 3D high-end software UG established high-temperature scanning target rotating 3D solid model, and used UG/Motion application modules and mechanical systems kinematics / dynamics simulation analysis software ADAMS established high temperature Target virtual prototype model, and make kinematics simulation analysis, according to comparison and analysis the simulation results and theoretical calculation results, verified by building virtual prototype model of correctness to be high-temperature scanning target rotating movement, and find the velocity curve to achieve uniformity.Because virtual prototype technology existed for not a long time there were several mature applications in car and aviation fields now, the applications in other field especially in the semiconductor equipment are hard to find. Using virtual prototype technology to study high temperature rotation scanning target in this paper, it not only obtained a certain achievement, but also laid the foundation for applying virtual field technology in other key parts even and all of the high-current oxygen ion implanter.