Design Of RF Power LDMOS Device

Due to the rapid development of RF Integrated Circuit, the demands of RF Power Devices in consumer electronics, mobile communications and military radars are growing everyday. The applications of the current RF Power Devices are limited because of the high cost and complicated technology,so new RF Power Devices with compatible technology and low fabrication cost are badly needed to satisfy the demands of the markets.LDMOS device has been used more and more widely in the RF IC industry due to its excellent electronic characteristics and RF performance.RF Power Device with LDMOS structure is introduced in this paper. The process flow and lay out of the device are designed based on the 0.5μm Standard CMOS Technology of the Institute of Microelectronics of Tsinghua University. The device is taped out at the foundry of the Institute of Microelectronics of Tsinghua University. According to the test results, this device basically meets all the primary design requirements.This paper also focused on the effects and physical mechanism of the quasi-saturation phenomenon of RF LDMOS Device. Aim at reducing the quasi-saturation phenomenon, a novel RF LDMOS device is introduced. By using the software provided by SILVACO International Inc., the process and device simulation of both the conventional and novel RF LDMOS structure are performed. The simulation result shows that the quasi-saturation phenomenon of the new device is reduced and its primary electronic performance are greatly improved.