The Research And Application Of RF CMOS PA

PA is very important in the wireless communication system, it amplify high frequency signal to the desired power which is sent through the antenna. With the improvement of Sub-micrometer technology, base-band, digital and analog block are successfully integrated in a single chip with CMOS technology.Based the system demand, compare different classes of PA, a design scheme of class A is determined in this paper. A typical dual-band RF CMOS PA is discussed in the paper, the PA works at 434MHz and 868MHz which adopt the paradise structure, at the low supply voltage, design achieves the maximum PAE, the power controllable arrive to 40dB. In order to achieve low voltage and low power dissipation ,the design adopt TSMC 0.18 process, supply voltage is 1.8V, fully consider the short channel effect of the deep-sub-micrometer CMOS device , solve the trade off between output power , current dissipation ,the linearity control of different output power ,substrate couple and low breakthrough voltage . The project of dual-band RF CMOS PA has been taped out for two times ,each problem and debug is successfully solved .Beside the dual-band RF CMOS PA , a RF PA for BT system is also introduced in this paper , all simulation parameters are satisfy the design demand , but have not been taped out .The successful of these two PA achieve the integration of base-band , RF and analog ,in the appendix , the layout of SOC is given .