Research On Noise Non-gaussian Analysis Of In Metal Interconnection

The interconnection lines of modern integrated circuits have effective cross sections in the range of 1μm 2 or less . Therefore , currents of a few milliamps result in current densities in the range of MA/cm-2. Under these conditions , the phenomen of electromigration arises.Electromigration has been one of the important invalidation in VLSI. resistance is the traditional token parameter of electromigration ; noise is the new tool , more sensitive and complete . The past noise were regard as Gaussian noise in the electromigration analysis , and the model based on Gaussian process ; the non-gaussian noise were found in the electromigration experiment phase . The non-gaussian noise origined from the danamical mechanism , so electromigration danamical information can obtained from non-gaussian analysis of the danamical parameter .Based on a brief description to the damage mechanism for electromigration and non-gaussian of noise theories , analysed the electromigration noise used by non-gaussian measured tools , found a new experiment phenomenon—the non-gaussian noise exist in the whole electromigration process ; the gaussian noise dominant in the early stage , the non-gaussian noise dominant in the voids nucleation and growth stage . A new parameter–T2 was brought to character the non-gaussian noise in electromigration process, then contrast it with the resistance and conventional noise parameter . In the forth section , we introduced the free volume , described the electron scattering mechanisms , simpled the complex electromigration process . Based on the free volume ,built a new electromigration model—non-gaussian noise model, we explained the noise non-gaussian in the electromigration , this agreed with the experiment phnenomen . As a result , the noise non-gaussian can be a new token parameter of electromigration .