Study And Fabrication Of Microwave Transmission Line And Digital Phase Shifter On High-Resistivity Silicon Substrates

Modern microwave components and circuits tends to miniature, low cost and low power design and technics. Microwave integrate circuits were designed and fabricated on GaAs substrate which has low loss characteristic, because transmission loss of microwave signal is extreme high on standard silicon substrate. In order to improve the characteristic of silicon substrate, people have done lots of research. high-resistivity silicon substrates has shown it great improvement on low loss characteristic because of it's higher resistivety, and is expected the get good performance on transmission characteristic.Microwave transmission line made on high-resistivity silicon substrates is the basic structure of microwave passive, active components and integrate circuits which are fabricated on the same substrate.Traditional microwave components and integrate circuits are frabricated on GaAs substrate. Transmission lines on standard low-resistivity silicon substrate have high loss because of its semiconductor charavteristies. In this paper, we analyzed the theory, fabricated and tested the transmission line. We also designed and fabricated a 4 bit phase shifter on high-resistivity silicon substrates. Several results have obtained.Transmission lines on high-resistivity silicon substrate was fabricated and tested. The measured result of the low loss of the 50Ω transmission line demonstrates that high-resistivity silicon can be used as a microwave substrate.Basic phase shifter mechanism and various basic phase shifter circuit forms were analyzed. A 4 bit digital phase shifter was designed using ADS and fabricated on high-resistivity silicon substrates on the silicon product line.The phase shifter circuit uses UMS PH25 PHEMT switches as control devices. The whole circuit consists of five digital bits corresponding to differential phase shifts of 22.5°,...