| In this thesis, the β-FeSi2 films were fabricated by magnetron sputtering (MS) and the technology about magnetron sputtering is studied in detail. The growth mechanism of 6-FeSi2 films is analyzed.The samples by MS were characterized by XRD and EDAX and compared with those films by ion beam synthesis (IBS). In addition, the effect of the annealing conditions on the quality of films is analyzed. The results show that the quality of the samples fabricated by IBS is better than the samples fabricated by MS at the same temperature. The appropriate sputtering time, sputtering power and annealing temperature are needed for improving the quality of films fabricated by MS.Optical properties of β-FeSi2 films are studied by spectroscopic ellipsometry and Laser Raman spectrometer. By comparing the distribution of the densities of states with the absorption spectra of spectroscopic ellipsometry, the results show that the charge carrier transport properties of β-FeSi2 films depend on Si 3p and Fe 3d electrons. The red shift of the Raman signals is due to the decrease of the bond-length because of stress existing in the samples. This situation causes a decrease in the oscillator strength of the Fe-Si bonds and leads to the red shift of the Raman signals. |
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