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Design And Trial Of 150A/1200V Power Diode With Fast And Soft Recovery

Posted on:2011-12-01Degree:MasterType:Thesis
Country:ChinaCandidate:Y XingFull Text:PDF
GTID:2178360305470363Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
High-Power Fast Recovery Diodes (FRD) is widely used in the field of power electronics, as a freewheeling diode in parallel with the three-terminal power device used in modern power electronics technology, the key device. With the power electronics technology, power electronic devices with increasing frequency, especially in IGBT. power MOSEFT successful development and supported by the rapid development and commercialization. Therefore, with the IGBT. power MOSFET high-frequency electronic devices such as matching, and the indispensable fast soft-recovery diodes developed into an important and urgent needs.In this paper, for 150A/1200V PIN high-power fast recovery diode, in the analysis FRD basic structure, operating principles and main parameters of influence, based on theoretical calculations were used as well as computer simulation technology, according to the device's forward voltage drop VF, reverse voltage VR, the reverse leakage current IR, the reverse recovery time trr electrical parameters of its structural parameters and process parameters of the theoretical calculations and computer simulation analysis and optimization. Especially for long-life base region local regional location, life size, and long-life base region of the device parameters such as forward voltage drop VF, reverse leakage current IR, the reverse recovery time trr carry out key electrical parameters analysis and optimization, finally be diode structure and process parameters. Combined with process conditions and process parameters to develop a process. At last the sample trial and the samples tested. Its test results show that:the test sample of the forward voltage drop VF, reverse voltage VR, the reverse recovery time trr of the performance indexes meet the design requirements. Illustrates the design parameters of the device structures and process methods and parameters correct; design method is feasible. Flat 150A/1200V PIN for future high-power fast recovery diode design and manufacturing, with a certain reference value to provide the structural parameters and process parameters.
Keywords/Search Tags:fast recovery diode, minority carrier lifetime, reverse-recovery time
PDF Full Text Request
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