Research Of Yb:YAG Crystal Growth And Its Properties

The electric structure of trivalent ytterbium is 4f¹³, it has only one basic state and one excited-state with the absence of excited-state absorption and upconversion. In addition, YAG has the good mechanism character and its wide absorption band and it can be activated by InGaAs laser diodes used as pump sources, it can obtain 1030nm wavelength light, it also can be doped with a high concentration ,so Yb.YAG is a promising crystal.In this article, the materials synthesis with 5N raw materials and analysis its characters with X-ray, the result showed that the high-pure materials had been obtained. The doped 5% Yb:YAG crystal was grown by Czochraski method. The experiment studied on crystal growth technology such as structure of temperature field, some certain nude of crucible of the wall effecting on crystal growth and the theory of little face growth. After being processed ,the piece of crystal was analyzed on its diffusion stripe. The experiment measure its spectrum of absorption and fluorescence , calculating its absorption area and cross-section area, fluorescence life, the parameter of crystal cell and separate coefficient. After annealing ,the experiment analyzed the cause of the color-center and explored the theory of causing fluorescence. It also analyzed the sorts of the crystal defects and their causes. So Yb:YAG is one of the most promising laser crystals.