Studies On Point Defects Of CdSe Single Crystal

Nuclear radiation detector is an important detect device for experimental nuclear physical technology, which has an indispensable role in science research, nuclear safety, environmental monitoring, nuclear medicine, space aviation and mining industry fields. It's also important for nuclear physics. Currently, room temperature semiconductor nuclear radiation detector becomes the emphasis of nuclear radiation detector research in many countries for its good energy resolution; high detecting efficiency, little bulk, light weight and its portability.CdSe single crystal is a new promising material for making room temperature nuclear radiation detector .The preliminary researches show that CdSe single crystal has relatively high resistivity, large product of carrier mobility and life and high inhibition ability for high energy ray; It also shows that CdSe detector has relatively low leakage current, high detecting and charge collecting efficiency, good working stability, and no polarization effect as well.In order to make eligible detector, the fist step is the growth of high quality single crystal. If crystal contains high intensity's intrinsic lattice defects, they will induce locally severe change of carrier's recombination and capture ratio in detector's sensitive region after high energy ray's irradiation. They will also make charge carriers' deficient and even to incapable collecting in the detector's sensitive region due to recombination or capture before reaching electrode. As a result, both of them will make detector's energy resolution bad.