Design Of Material Structure And Epitexyial Growth Of 1.55μm High Speed LD

With the characteristics of narrow linewidth , high side mode suppress ratio ,low threshold current, and excellent monochromatic, coherence, the high speed semiconductor laser is the best luminescence source for fiber optical communication. It also has the wide application in military, communication and information process. The materials' structure design and epitaxy is the foundation of the whole laser's fabrication, and it has important influence on the optics and electricity performance of the laser. At present, the CETC NO.13th Research Institute got abundant practical experiences of quantum well laser fabrication. So that it permit us to go on with our research about the technology of high speed LD.In this paper, 1.55μm high speed semiconductor laser was studied. The main contents were the materials' structure design , the computer assistant simulation and the epitaxy, the study also came down to device's speed encapsulation and test.With the analysis and calculation of the strain theory in MQW, and wavelength design, we presented the appropriate strain and material composition. And then, we got the optimized cavity and well number, studying the threshold current density and temperature characteristic. After that This paper has analyzed and calculated the wave-guide mode theory. With the computer simulation we find the optimized waveguide structure. Finally, the whole structure simulation with computer was processed. The simulation of material gain, carriers transport, field intensity and spectrum educed the optimized structure.The laser with 1.55μm lasing wavelength was studied, which adopted Separation Confinement Heterostructure Multiple Quantum Wells (SCH-MQW) structure, we grew the materials with different conditions. After that, we tested these materials with X-ray DCD, electrochemistry C-V, photoluminescence (PL) technology, and concluded the best growth condition according to those results.Because of the high modulating characteristic, the high speed semiconductor laser with different electrode and waveguide structures was investigated. With the final analysis of modulating characteristic , the optimized technical structure was presented.Finally ,the laser module with center wavelength of 1556.3nm,threshold current of 12mA and the 3dB bandwidth of 8.5GHz was obtainted.