Study On Drive Section Of Integrated Gate Commutated Thyristor

Power semiconductor device is one of the cores of power electronics, they have widely been applied to save power electrical system and elevate security of system fields, etc. such as electrical driven inverter, UPS, syntonic transducer, switch electrical source fields, etc. In the fields of electrical and energy industry, they have played an important role.Now, the widely using power semiconductor devices are SCR, GTO, IGBT, etc. Because of SCR's limitation performance, they have been given up. In high power applied fields, IGBT has high input resistance, Although GTO has low depletion, it needs expensive and complicated absorb circuit .So IGCT are emerged.IGCT integrated gate commutated thyristor is from the development of the GTO gate turn off thyristor. It combines the advantages of GTO and IGBT, such as its low-opening loss, high reliability, voltage and current capacity and its high switching frequency.IGCT paper first introduces the basic working principle and key technology, and the advantages of the IGCT, the problem of IGCT. It is a very promising new type of high-power semiconductor switching devices. Then analyzes the problem of the gate drive circuit and research the principles of the circuit. Finally, using the application of Pspice or CAD circuit simulation software simulate the circuit of IGCT.Using the application of Pspice or CAD circuit simulation software simulate the circuit of IGCT, the result is that the opening of the gate current can quickly reach 200A within 2μS or so, when the gate current is closed the current IG can be extracted about 400 A in 4μS, so it Compliances the conclusion.In the paper, we analysis and design the integrated gate commutated circuit theory simply, and reference the integrated gate commutated thyristor drive circuit.For the integrated gate commutated thyristor drive circuit of reference.