Research On The Damage Mechanism Of The PIN Diode Under EMP With Fast Rise Time

PIN diode is widely used for control circuits such as switch circuits, limiters, phase switchers and attenuators because of its advantages as high reverse breakdown voltage, high allowable power, large controllable capacity and low loss. It is an indispensable and irreplaceable key device for military matters and civil use. Because of the thick I block, the PIN can bear high breakdown voltage. But PIN will breakdown even burnout when EMP with fast rise time is on it. This phenomenon will destroy the stable work of PIN. This paper uses the PIN in practical application for modeling and emulation. It has valuable significance.This article firstly introduces the structure and the working principle of PIN diode. It emphatically introduces about positive bias feature and reverse bias feature. Then, we use the software ISE TCAD to simulate the PIN diode. We get the relation of rise time and current, different voltage and current through the simulation results. Beside this we use a given voltage and rise time EMP on the PIN for getting the breakdown and burnout process.At last, we talk about the relation of PIN's structure (such as the thickness of block I and the device materials) with its burnout. This paper applies a theory basis for analyzing the damage assessment and stabilized work of semiconductor devices under EMP.