Research Of Single Event Burnout Resistance For 4H-SiC JBS Diode

With the rapid development of science and technology and the wide application of the third generation semiconductor,the requirements of power semiconductor devices in power electronic systems and integrated circuit systems are increasing.4H-Si C junction barrier Schottky diode(4H-Si C JBS)combines the advantages of Schottky barrier diode(SBD)and pin diode.It has the characteristics of low voltage,high switching speed,high breakdown voltage and low reverse leakage current.As a new generation of the power semiconductor device,4H-Si C JBS diode has great performance advantages and is very suitable for application in the field of aerospace.4H-Si C JBS diode has strong resistance to total dose effect and displacement damage effect,but its resistance to single event burnout(SEB)is far less than expected.In view of this,this paper studies the SEB generation mechanism of 4H-Si C JBS diode,and designs two new diodes with anti SEB properties with different structures based on the anti SEB reinforcement idea provided by mechanism analysis,so that SEB does not occur under the irradiation conditions of reverse bias voltage 1200 V and let value 0.5p C/?m.Firstly,through the irradiation simulation of traditional 4H-Si C JBS diode,the mechanism of SEB is analyzed from the simulation results,which provides a theoretical basis for the design of anti SEB reinforced structure.Secondly,a 4H-Si C JBS diode(4H-Si C MBL-JBS)based on multiple buffer layers and layered P-type region is proposed.By analyzing the irradiation simulation results of 4H-Si C MBL-JBS diode,it can be seen that the multiple buffer layers in 4H-Si C MBL-JBS diode solve the problem of peak electric field accumulation at the N-/N+ junction interface and greatly reduce the collision ionization rate at the N-/N+ junction interface.At the same time,4H-Si C MBL-JBS diode reduces the doping concentration of drift region and P-type region at PN junction,which greatly reduces the collision ionization rate between Schottky interface and PN junction.Based on the above two improvements,the global maximum temperature of the device irradiated by high-energy particles is reduced to 2817 k.It can be seen from the process flow that the preparation of 4H-Si C MBL-JBS diode is simple,easy to realize and has high feasibility.Finally,aiming at the defect that 4H-Si C MBL-JBS diode has high temperature near the anode metal,which is easy to cause anode metal damage,a 4H-Si C heterojunction diode based on multiple buffer layers(4H-Si C MBJBH)is proposed.By analyzing the irradiation simulation results of 4H-Si C MBJBH diode,it can be seen that the temperature near the anode metal of 4H-Si C MBJBH diode is greatly reduced,and the global maximum temperature of 4H-Si C MBJBH diode irradiated by high-energy particles is reduced to 2526 k,which proves that the anti SEB performance of 4H-Si C MBJBH diode can be improved.By analyzing the basic electrical characteristics of4H-Si C MBJBH diode,the simulation results show that the basic electrical characteristics of4H-Si C MBJBH diode have also been greatly improved.This paper also gives the process flow of4H-Si C MBJBH diode.After improving the position of P-type area,the process of 4H-Si C MBJBH diode is simpler,easier to implement,more feasible and lower cost.