Research On Electrical Characters Of RRAM And Peripheral Interface Circuit

Integrated Circuit, which with the enhancement of capability and enlargement of application, becomes more and more important in national IT industry. During the past several decades, memory technique that based on CMOS has made great progress in breaking the feature scale of integrated circuit. The challenge of physical and capability barriers of present semiconductor technology calls for novel nanoelectronic solutions. RRAM (Resistive Random Access Memory) which based on nano-crossbar has been widely researched as a hopeful successor for future memory.Our research mainly focuses on the electronic character of RRAM unit. Firstly we fabricated RRAM unit which has distinct bistable resistive effect, then we test its electronic character. For system-level design, I developed a new behavioral modeling method for speeding-up applications development. Via simulation experiments, this modeling method can build behavioral model more precisely and flexible.In addition, this paper pays attention to the research of effective reading circuit design of RRAM. For the intrinsic character of nano-crossbar, the sneak path current becomes a barrier when the scale of RRAM array grows large. In this paper, a new reading circuit is proposed to minimize the effect of undesirable current, which was verified to applicable to large scale RRAM array.Based on the research of RRAM electrical character, we additionally work on the investigation of RRAM peripheral interface circuits. Such as reference voltage generator, writing circuit, encoder circuit and so on. Finally, we analyzed the RRAM realization architecture.