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The Design Of Si Piezo-resistive Micropressure Sensor

Posted on:2010-06-02Degree:MasterType:Thesis
Country:ChinaCandidate:C H YouFull Text:PDF
GTID:2178360275985541Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Sensor technique is the most important sign of the level of the development of modern science and technology, and is one of three greatest technique of the information (including communication technique and calculator technique). Si pressure sensor is the most widely used among all kinds of sensors. The most measurement range of pressure sensor in the domestic market is over 1000Pa and lower range pressure sensor must be imported overseas. It is significantTo develop and research pressure sensor with maximum output lower than 1000Pa, which will contribute to improve the technology of low-pressure sensor and promote the development of related industries. The present research status and industrialization situation of ultra-miniaturized pressure sensors is reviewed. The problems on design of the multilevel sensing structure, micro-machining process of chips, non-stress packaging of chips and the static calibration are proposed. The methods for solving these problems are given.In this paper, the operation principle of the piezo-resistive pressure sensor was analyzed and its working performances were compared, its low- pressue-orientations were reviewed. Through comparing and analyzing several structure diaphragms, an optimal structure was obtained, whichWas simulated by the software ANSYS. Two-leveled islands and beam-diaphragm structure realize high output sensitivity and excellent nonlinearity. Appropriate passivation layer stress complementary technology is the core of Non-stress manufacture.
Keywords/Search Tags:Piezo-resistive micropressure sensor, Diaphragm, Non-stress packaging, Two-leveled islands and beam-diaphragm structure
PDF Full Text Request
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