Design Of Ultra-high Speed Half Divider Frequency And Study On Its Gamma Radiation

High-speed Divider frequency circuit is an essential part in communication applications, it is widely used in PLL frequency synthesizer, in the PLL frequency synthesizer, Divider frequency and VCO are working at the highest frequency of modules, their speed determines the highest speed of the whole system, their power consumption often occupies an important part of the whole system in power consumption, in order to reduce power consumption, sometimes using the prescaler divider frequency as the first level in the divider frequency device group. In this thesis,using the 1μm InGaP/GaAs HBT technology, we design a half divider frequency working at an Ultra-high speed by simulation and compromise between the speed and power consumption in the design process. We do radiation experiments of 1Mrad (Si) on the divider frequency under the ⁶⁰Co gamma rays. The degradation rule of main parameters of divider frequency is studied on the different total dose before and afterγ-Ray radiation, their radiation effects, radiation damage mechanism and radiation hardening technology mechanism are explored.The following work is included in the thesis:We design a half divider frequency working at an ultra-high speed. Based on the CML structure, the D flip-flop is the master-slave structure. The ultra-high speed divider frequency is composed of the input buffer, the core part of the divider frequency, the output buffer and the bias circuit, compared the ECL structure in design .Considering the compromise of the speed and power consumption, ultimately, the ultra-high speed divider frequency based on CML structure is carried out flow and tested. Do the gamma radiation experiments on the divider frequency. Based on the domestic existing radiation experimental environment, we selected 12 similar characteristics divider frequency from the same flow pieces as experimental radiation samples, 1Mrad (Si) radiation experiment is on ⁶⁰Co gamma radiation sources at Peking University by HFY-1A cobalt source, using the console HFY-601 stationary multi-channel XY dose rate meter records irradiation doses. Irradiation dose rate 50rad / s, irradiation experiment is in the room temperature without bias conditions. The experiment tested the parameters of the designed divider frequency before and after radiation: including maximum frequency, different frequencies of minimum input power and output power, working voltage, static working current and calculated the DC power consumption. Analysis of the experimental data results before and after radiation, summarizing the main cause of the divider parameter changes is the body injury in ionizing radiation, oxide charge accumulation and induced Si/SiO₂ interface state and radiation during radiation annealing process , in the preliminary conclusions ,the chip has a strong resistant ability to gamma radiation, while has reference value for 1Mrad (Si) gamma radiation research of other GaAs heterojunction material composed of microwave circuits .