Study Of HPM Radiation Effects On MOS Devices

We conducted a research on HPM Radiation Effects On MOSFET in order to set technic foundation for military analog IC's Anti-radiation design. This research uses MOSFET 0001 and 0002 as the object and proceeds experiment by introducing direct injection method. The failure modes and failure mechanism are studied, and the failure model is established. By comparing the model parameters before and after the HPM Radiation, and based on device physics theory and statistical analysis, we give the proposed technology countermeasuresThis thesis also considers the effect of the instrument precision on the parameter extraction results. And finally suggestions for MOS's HPM strengthening are proposed.