Study Of Growth Kinetics For Silicon-based Strained Materials Based On CFD

The size of Silicon MOS device is coming close to its physical limits, which isshrinking according to Moore's Law. Silicon-based strained materials (SixGe1-x andstrained silicon) has became the next generation semiconductor material to followMoore's Law for its advantages, such as high mobility, adjustable band structure andcompatible with conventional silicon technology.In this thesis, different growth kinetics for different growth techniques have beendiscussed. The principle of silicon-based strain materials as well as the type ofsilicon-based strain and preparation of materials have been researched in this thesis. Itsband structure and transmission characteristics have also been researched carefully.And so has the theory of increasing mobility in silicon-based strain materials .In this thesis, the growth theory of silicon-based strain materials has beendiscussed and boundary layer theory, Grove theory and Fick's first law was focused on.Based on the theory of computational fluid dynamics, the physical parameters in CVDgrowth kinetics has been researched deeply.In this thesis, a model of RPCVD chamber cavity has been constructed by a softof Computational Fluid Dynamics (CFD), which is called FLUENT. In addition, theimport and export and wall boundary conditions has been defined.Based on the FLUENT, the temperature distribution, density distribution, pressuredistribution and velocity vector distribution in the RPCVD chamber cavity have beensimulated. In addition, the method of fixed variables is used to analyze its effects ontemperature distribution, density distribution, pressure distribution and velocity vectordistribution.