Study Of Surface Growth Kinetics Models For Silicon-based Strained Materials

The growth technology of silicon-based strained materials has been experiencedMBE(molecular beam epitaxy), UHV/CVD(ultra-high vacuum chemical vapordeposition) and LPCVD(low pressure chemical vapor deposition), and now, has beendeveloped to RPCVD(pressure chemical vapor deposition) which is suitable for massproduction.But, the research of growth mechanism and growth kinetics model closelyrelated to the growth technology is far behind the study of growth technology, thisphenomenon has seriously affected the development of the growth technology ofsilicon-based strained materials.The main work of this paper is to study the CVDgrowth mechanism and kinetics of SiGe material.Based on the research of collision and adsorption theory,the paper focuses onstudying and establishing surface growth kinetics model of silicon-based strainedmaterials ,then doing a RPCVD growth experiment.And the growth rate of theexpermental data and calcutated values are compared and the result is that at lowertemperature the accuracy is higher and at higher temperature the error is higher.According to the experimental results and the characteristics of CVD and Grovetheory,the paper has propose CVD flow density model of silicon-based strainedmaterials,ie discrete flow density model for the first time;and based on the discrete flowdensity model,the paper has compared the growth rate on higher temperature and theerror is low.