Stretchable Flexible Electronic Devices Optimum Design And Simulation Analysis

With the stretchable electronic circuits are widely used in portable medical devices and wearable smart devices,the study of the electrical properties of stretchable electronic circuits has become a hot topic.Therefore,it is urgent to establish a design platform that analyzes the performance of flexible electronic circuits.A flexible electronic design platform is presented in this paper.Firstly,in order to simulate and analyze the circuit performance of a complete stretchable flexible electronic circuit,it is necessary to simulate the important components of the stretchable flexible circuit.Secondly,the flexible electronic design platform could be combined with the characteristics of the flexible electronic circuit transfer technology.Combined with the feature of transfer technology in flexible circuit and aimed at the characteristic of soft-hard combination differ from PCB technology,the integrated circuit library component model and interconnection characteristics modeling in the condition of big deformation have been solved based on flexible electronic design platform.The main innovations in this paper include the following three points:1.A flexible electronic design platform has been presented.Flexible electronic design platform mainly consists of stretchable interconnection modeling,flexible device modeling,flexible electronic circuit system simulation,flexible circuit layout and routing simulation and other functions.?1?The research of stretchable interconnect is carried out.Study on the single stretchable interconnects,the parasitic parameters are extracted and the S-parameter is analyzed in the frequency domain and the delay is analyzed in the time-domain.Study on the coupling of the flexible interconnection conductors,the S-parameter is analyzed in the frequency domain and the crosstalk is analyzed in the time-domain.?2?The simulation and modeling of flexible device are in process.Parasitic parameters of flexible resistors and flexible capacitors are extracted,respectively.Simulation of electrical performance of flexible NMOS and PMOS devices is in process;?3?Simulation analysis of flexible electronic circuit system is carried out.Making flexible comparator as an example,the function and electrical performance of the flexible circuit are verified by simulation in the platform;?4?Flexible circuit layout rules,taking the flexible amplifier circuit as an example,the flexible interconnection layout and routing is simulated and verified.2.S-parameter model of a single stretchable interconnect and a coupled stretchable interconnect crosstalk model are established.For the establishment of S-parameter model of single stretchable interconnect,firstly,the parasitic parameters of the interconnection are extracted and analyzed based on the skin-depth effect and the deformation of the wire.Then,in view of the stretchable interconnection and the Kirchhoff's Law the wire transport matrix is obtained.Finally,the transport matrix is transformed to obtain the interconnected S-parameter model.The coupled stretchable interconnect conductor crosstalk model is established.Firstly,the extraction analysis of the corresponding parasitic parameter is carried out.Then,the equivalent circuit of the coupling interconnection conductor is built.Finally,based on the Kirchhoff's Law the crosstalk voltage is calculated.The validity of the S-parameter model with in a tolerance of 3%was proved by comparing the simulation results with measurements.The validity of the crosstalk model with in a tolerance of 10%was proved by comparing the simulation results with measurements.Therefore,the proposed models can be easily applied to design flexible electronic systems.3.Extraction and analysis of small signal model parameters of flexible transistors.Taking the NMOS device as an example,the change in the performance of the device before and after transferred is compared.For the flexible transistor transconductance G_m,the threshold voltage of the device becomes smaller,the leakage current I_ds becomes larger and the device trans conductance becomes larger due to the overall doping concentration of the flexible PDMS substrate becoming smaller;For the device output resistance R_ds,the MOS module function module is transferred to the flexible substrate so that a part of the substrate material is transform from the semiconductor material to an insulator material.Therefore,substrate equivalent to the parasitic resistance becomes bigger;For the device gate capacitance C_gs,C_gd.The upper silicon thickness is changed,the gate capacitance decreases as the thickness of the upper layer is thinned.For the junction capacitance C_ds,junction capacitance does not change because the MOS function module before and after transferred have no impact.