Study Of Monolithically Integrated Optical Transceivers With EDG Based On InP

Since 1970s, the progress of epitaxial technology for Indium Phosphide (InP) based material system has enabled the long-life, high reliability semiconductor active devices to mature, which has laid the foundation for a leap-forward development of optical communication. The Indium Phosphide has a great deal of flexibility for the realization of a variety of photonic devices since its energy band structure and quaternary compounds can be tailored by varying its composition. Therefore, InP based integrated photonic devices has been widely investigated, especially for telecom applications.Etched Diffraction Grating (EDG) has received great interest g as a DWDM (dense wavelength division multiplexing) device because of its small size and compact structure. Based on InP, it can be monolithically integrated with many active devices such as semiconductor laser, detector, modulator etc, which will make the chips more compact and multi-functional.The subject of this thesis is based on InP and its quaternary compounds, using EDG to design low-cost, high reliability monolithically integrated photonic devices for tunable lasers and diplexers/triplexers used in fiber-to-the-home (FTTH) applications. The fabrication processes of EDG based on InP are developed in order to lay the foundation for the future development of other related photonic devices.