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Design And Realization Of C-band Microwave Power Amplifier

Posted on:2012-08-22Degree:MasterType:Thesis
Country:ChinaCandidate:Y N LiFull Text:PDF
GTID:2178330332487822Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
In modern wireless communication,high power microwave amplifer is necessary and playing a critical role.Even the whole communication system will be affected by its performance. High power microwave power amplifiers are increasingly and extensively applied in radar and Electron Countermeasure while power amplifier design is still in initial stage in China.We place emphasis on C-band high power microwave power amplifiers design and realization in the thesis. We has studied some key issues such as power combining and DC biasing techniques to realize C-band high power microwave power amplifiers. Through theoretical analysis and simulation, we have designed a GaAs high power amplifier. There are some experince for the high power amplifier design: the use of ADS software for Wilkinson power divider/combiner and Autocad for the fix instrument.The paper discuss how to design an amplifier in theory,introduce the basic points necessary in this field,choose the proper method and proper devices,fabricate the circuit in a right way and use two-way combiner/divider to achieve a high output power.The amplifier was developed with the Pout of 46dBm(max) and the gain of 38 dB over the5.5~6GHz range.
Keywords/Search Tags:c band high power, DC biasing, Wilkinson divider/combiner
PDF Full Text Request
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