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Research On Fe2O3 Thin Films On GaN Prepared By Magnetron Sputtering Method

Posted on:2021-01-18Degree:MasterType:Thesis
Country:ChinaCandidate:J GuFull Text:PDF
GTID:2428330614466051Subject:Electronic and communication engineering
Abstract/Summary:PDF Full Text Request
Fe2O3 is a common and typical oxide material,which has important applications in many fields.At the same time,as a semiconductor material,it has attracted more and more attention from researchers in the field of photocatalysis and memristor.In this paper,we prepared Fe2O3films on Ga N substrate by magnetron sputtering technology,and did the research on the phase composition,surface morphology,component characteristics of Fe2O3 films and electrical characteristics of Fe2O3/Ga N heterojunctions.The obtained results showed that:Fe2O3 films with different thicknesses can be successfully prepared by DC sputtering technology using Fe target on c-axis oriented Ga N.For samples prepared under different O2flow rate,the variety of O2 flow rate did not significantly change the lattice structure of Fe2O3.As the film thickness increases,the surface roughness also increases,and Fe2O3 film is more inclined to deposit into granular film.As the flow rate of O2 continues to increase,the surface roughness first increases and then decreases.This may be attributed to excessive O2 which causes the sample surface to be reoxidized,resulting in further improvement of the surface roughness.The composition analysis showed that the chemical environment of Fe ion did not change significantly with the different thickness,while the chemical environment of O ion changed slightly which may be related to the variety of the surface morphology of the samples,and the chemical environment of O ion on the surface is different from that in the crystal.With the increase of O2 flow rate,the composition analysis indicates that the chemical environment of Fe ion and O ion are changed.The research on I-V characteristics of Fe2O3/Ga N heterojunction show that the I-V characteristics of samples prepared under the condition of O deficiency are more symmetric than those prepared under the condition of O abundance.Combined with the simulation results,it is mainly caused by the different work functions of Fe2O3.Meanwhile,the results also show that the Schottky contact model can describe the I-V characteristics of Fe2O3/Ga N heterojunction better than the n N semiconductor heterojunction model.The results of the research on the resistance variation characteristics of Fe2O3/Ga N heterojunction show that the resistance of Fe2O3/Ga N heterojunction changes with time under the fixed bias,and the junction resistance will decrease relatively when the applied bias increases,which are related to the O vacancy migration in Fe2O3.These results provide experimental basis for the future application of Fe2O3/Ga N heterojunction in the fields of photocatalysis,ultraviolet detection and Ga N-based memristor.
Keywords/Search Tags:Magnetron sputtering, Fe2O3/GaN heterojunction, ?-? characteristics
PDF Full Text Request
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