| Luminescence based on silicon has always been the key subject of the study of Si-based materials and devices. Since the year of 1990 when Canham firstly found strong luminescence at room temperature from porous silicon fabricated by anodization, so many kinds of Si-based materials have been studied and their luminescence properties have been investigated thereafter. Considering the relative maturity of Si 1C technique, people always want to realize optoelectronic integration in order to provide a new path for modern optical communication and optoelectronic computing. To fabricate nanomerter Si-based material with strong luminescence will be the vital means to realize optoelectronic integration. In order to realize optoelectronic integration we have to make optoelectronic devices with high efficiency of emitting and receiving optical signals. It is generally recognized Si is an indirect band semiconductor and can not emit light efficiently, while it is the basic material of modern microelectronic technology, so it is important to find materials based on silicon with effective luminescence. Semiconductor full color display is also the hot spot in current investigations, for it can greatly improve the miniaturization and integration of display devices.The third generation wide band gap semiconductor has its special advantage in blue emission, so many people are challenging to fabricate wide band gap semiconductors such as SiC and GaN to obtain blueemission, but both of them are not compatible with Si 1C technology. In recent years the studies of SiC blue emission materials based on Si have made great progress and received much interest. It can be predicted that SiC blue emission materials based on Si will be the hot spot in the research of Si based luminescence material.As to the emission mechanism of Si-based material, many models have been proposed, for example the quantum (size) confinement effect model, the surface recombination center model and the quantum confinement-surface recombination model. At present no theory can explain all the emission phenomena. The blue and violet emission from C+ implanted Si samples originates from the nanometer Si with embedded structure, and it can be attributed to quantum confinement -surface recombination. The porous SiC film formed by magnetron sputtering and following anodization can emit ultraviolet light, which can be attributed to quantum (size) confinement effect.In this paper we choose two different substrates of epitaxial Si and single crystalline Si, then implant C+ ions. After annealing and anodization, strong blue and violet emission can be obtained from these samples. Blue emission at 430nm can be obtained from our hydrogen annealed samples, while violet emission at 400nm can be obtained from the nitrogen annealed samples. X Ray Diffraction(XRD), Infrared Spectra(IR) and Scanning Electron Microscopy(SEM) are employed to study the structure, composition and morphology of the samples. The emission mechanism is discussed therein. By magnetron sputtering and following anodization, we also fabricate porous SiC film, the ultraviolet light emission property of which is studied and the emission mechanism of which is also discussed.In chapter 1, the state of silicon based luminescence material isVIsummarized, all kinds of emission mechanism are presented, and the significance of our current study is proposed. Due to the rapid progress of optoelectronic technology, Si-based light emitting material has great potential, which will spur new progress of Si 1C technology.In chapter 2, the experimental devices, instruments, experimental procedure and all means to characterize our samples are introduced. Low energy ion implantation machine is employed to implant C+ ions into Si substrates at the energy of 40keV, 50 keV and l.SMeV and with the dose of 1X1016 ions/cm2, 2X1016 ions/cm2 and 2X1015 ions/cm2, respectively. Hydrogen and nitrogen are used as annealing ambience, the annealing temperature is controlled at 800癈 > 850癈 , 900"C , 950"C , 1000癈,...
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