Preparation Of Porous Silicon By Single Groove And The Study Of Its Luminescence Properties

Silicon material is the basis of the modern microelectronic and informationtechnology and industry, but silicon is also an indirect band gap semiconductormaterials. Composite luminous of Silicon is efficiency and low and the emission peakis not in the visible region. Generally, it can not be used in the field of photonics. Inthe1990s, the photoluminescence of porous silicon in the visible region was reportedand attracted wide attention. It brings hope for the realization of light-emitting ofsilicon and optoelectronic integrated. Currently, research on porous silicon has madeconsiderable progress, but there are still many important issues remain unresolved,and some relevant theory of porous silicon still in controversy.In this paper, we first reviews the main developments in present porous siliconresearch,and made a brief introduction of the development process of porous silicon,preparation methods, formation mechanism, luminescence mechanism andapplication prospect based on refer to the extensive literature on the basis. PorousSilicon is prepared by Single Groove devices of Electrochemical under differentreaction conditions. We study the effects of preparation conditions on the poroussilicon samples by using scanning electron microscopy images andphotoluminescence spectra of the sample.It was found that in the condition of gradient-type current, the surface of thesample exist the porous structure and nanowires. SEM images can be found that thesurface of the samples exist several larger diameter etching pits，the bottom of thoseetching pits exist better quality reticulated porous silicon structure. In other places ofsubstrate nano-linear structure appears. When using certain specification siliconsubstrate in experiment, a large number of cross-shaped structure with square hole inthe center of it appears in sample surface. In this paper, these phenomena aredescribed and analyzed.