Exciton Effect In Semiconductor Quantum Well Microcavity Laser

Recent years, with the development of modern grown technology in superthin layer material (es. MBE and MOVCD) and various super-elaborate artifactitious technology, the study in small scale optical microcavity arouse people's interests. Especially, after finding the Rabi splittling phenomena for strong coupling in quantum microcavity (QMC) structures originated from the pioneering work of Weisbuch and coworkers, the recent development of CQED has resulted in a major boost to both experimental and theoretical investigations of exciton phenomena in semiconductor. The thesis study the exciton phenomena in a QMC structure-VCS EL.Passing articles of calculating the reflectivity spectrum of VCSEL did not consider the exciton effect. Besides, most of the experiments in QMC are InGaAs quantum well. In InGaAs quantum well, the transition energy distance between heavy-hole and light-hole is great because of the stress made during the quantum well growing process, so as to neglect light-hole. But in GaAs quantum well, the transition energy distance is small and light-hole should take into account.The main work is as follows: This thesis is study the GaAs quantum well semiconductor mircocavity , calculate the transition energy of light-hole exciton and heavy-hole exciton by finite barrier model, and calculate the complex refractive index in active region of QMC by dispersion model which consider the heavy-hole and light-hole exciton effect. We build the numerical value simulate program of relation between the complex refractive index in active region and quantum well structural parameter.Calculate and simulate the reflectivity spectrum of VCSEL that take exciton effect of microcavity into account by virtual refractive index and equivalent F-P cavity method. Study the reflectivity character. Build the numerical value simulate program of reflectivity spectrum according quantum well structural parameter in active region (length of quantum well , number of quantum well, component index of quantum barrier, an angle of incidence) and optic structural parameter of microcavity...