Design And Advancement Of Semiconductor Microcavity

Recent years, with the development of modem grown technology in superthin layer material (e.g. MBE and MOVCD) and various super-elaborate artifactitious technology, the study in small scale semiconductor microcavity arouses people's interests. Especially, after finding the Rabi splitting phenomena for strong coupling in quantum microcavity (QMC) structures originated from the pioneering work of Weisbuch and his coworkers. Semiconductor microcavity has attracted great attention due to their unique properties, and they are suitable for the fabrication of optical communication devices, such as lasers, optical filters, optical demultiplexers, optical switches, optical modulaters and nonlinear optical frequency converters, etc. Basic physics of semiconductor microcavities is reviewed in this paper. We designed a semiconductor microcavity laser with GaAs based bulk microcavity which is resonant at length at 800nm, and has 5λeffective length and high reflection ability at 10K temperature. By simulating the reflection spectrum, we determined the refraction coefficient of three types of semiconductor materials which we used in the microcavity.Firstly, we introduced the research background and developments of microcavity in these years, several kinds of structuers in detail. We also reviewed the basic physics of Microcavity Quantum Electrodynamics, including spontaneous emission in microcavity, Rabi splitting, microcavity polariton etc.Secondly, We introduced some important parameters of microcavity laser, as well as theory and method of designing a microcaty laser which includes the method of transfer matrix, Sellmeier Equation, structure of vertical cavity surface emitting laser, method of analyzing effective reflection index of DBR etc.What's more, since not known to required level of precision for design (temperature at 10K in experimental data), initial cavity design was using calculated low-temp refractive indices to design our objective microcavity. We also considered kinds of effects which affect the Q factor of microcavity laser, hence optimized parameters of microcavity laser. Last but not the least, we measured the reflection spectrum of the microcavity laser we designed, and analyzed the data we have got, then optimized the refraction index of semiconductor materials.The thesis explored the structure design of semiconductor microcavity laser, and found a way to determine the refraction index of semiconductor in low temperature, which provided useful information to our counterparts.