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Preparation Of Infrared ZnS Bulk Crystal By Chemical Vapor Deposition

Posted on:2003-08-19Degree:MasterType:Thesis
Country:ChinaCandidate:Z W YanFull Text:PDF
GTID:2168360065955176Subject:Materials Processing Engineering
Abstract/Summary:PDF Full Text Request
Zinc Sulfide (ZnS), a kind of II -VI compound semiconductor is used in optical and electro-optical device due to its wide direct bandgap. Infrared ZnS bulk polycrystals have been used as infrared optical windows and domes in infrared image formation and multi-spectrum accuracy guidance system.Infrared ZnS bulk polycrystals used in this paper is prepared by CVD method from mixture of zinc vapor and hydrogen and sulfur that are diluted with and carried by Ar gas to the growth system where they are mixed and reacted. The structural and optical properties and defects of Infrared ZnS bulk polycrystals are analyzed by Fourier IR spectrum, XRD, Energy spectrum and SEM, etc. The results demonstrate that impurities, crystal pores, hexagonal ZnS and Zn-H bond associate particles are reduced by using optimum technology and hot isostatic pressing method. The transmittance of the infrared CVD-ZnS from 3 u m to 5 n m and from 8 u m to 12 u m is over 71%, the transmittance of the infrared CVD-ZnS in visible region is up to 50% after HIP and the size of the infrared CVD-ZnS is up to 110 X 110 X 10mm3.
Keywords/Search Tags:ZnS, Chemical vapor deposition (CVD), Infrared crystals, IR transmittance, Crystal defect
PDF Full Text Request
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